Semiconductors

Impurity analysis in compound semiconductor wafers

Impurity analysis in GaAs wafers by cathodoluminescence

We analyzed the spectrum of GaAs wafers using cathodoluminescence (CL) and confirmed the peaks of each level that contribute to light emission. As a result of acquiring CL images for each peak, we were able to confirm that carbon and copper were scattered.

Cathodoluminescence measurement system HORIBA CLUE series

  • Can be added to existing electron microscopes
  • Compatible with measurements at ultraviolet to near-infrared wavelengths (200 to 2,100 nm)
  • SEM integrated high range CL imaging device (Imaging CL) can also be proposed.
F-CLUE
F-CLUE

紧凑型高光谱阴极荧光

H-CLUE
H-CLUE

多功能高光谱阴极荧光

R-CLUE
R-CLUE

拉曼光致荧光与阴极荧光

AFM (atomic force microscope) Raman XploRA Nano

  • Acquire physical information by AFM and chemical information by Raman simultaneously
  • Stress distribution analysis on the outermost surface on the order of nm is possible.
XploRA Nano
XploRA Nano

纳米拉曼光谱仪

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